Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes
2000 (English)In: Materials Science Forum(ISSN 0255-5476), Volume 338-3, Scientific.Net , 2000, Vol. 338-3, 1175-1178 p.Conference paper (Refereed)
The influence of morphological and structural defects on high-voltage 4H-SiC Schottky diodes was studied. Micropipes were found as severely limiting the breakdown voltage of 4H-SiC power devices, where as carrot-like defects did not influence the value of breakdown voltage. The screw dislocation density as determined by X-ray topography analysis under the active area of the diode was also found to directly affect the breakdown voltage value. Only diodes with low density of screw dislocations and free from micropipes could block 2 kV or higher.
Place, publisher, year, edition, pages
Scientific.Net , 2000. Vol. 338-3, 1175-1178 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
dislocation, epitaxial defects, Schottky diodes
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49458DOI: 10.4028/www.scientific.net/MSF.338-342.1175ISBN: 0878498540OAI: oai:DiVA.org:liu-49458DiVA: diva2:270354
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, October 10-15, 1999