Dynamic avalanche and trapped charge in 4H-SiC diodes
2000 (English)In: Materials Science Forum, Vols. 338-342, 2000, Vol. 338-3, 1327-1330 p.Conference paper (Refereed)
A dynamically reduced breakdown voltage from more than 2 kV under static conditions to 300 V during reverse recovery was measured for 4H-SiC p(+)nn(+) diodes. Device simulation indicates that deep hole-trapping donors in the n-base, close the pn junction, could explain the dynamically reduced breakdown voltage. Hole traps situated 0.66 eV above the valence band were found in the diode n-base by DLTS measurements.
Place, publisher, year, edition, pages
2000. Vol. 338-3, 1327-1330 p.
, Materials Science Forum, ISSN 1662-9752 ; 338 - 342
carrier traps, dynamic avalanche, impact ionization, reverse recovery
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49459DOI: 10.4028/www.scientific.net/MSF.338-342.1327ISBN: 9780878498543OAI: oai:DiVA.org:liu-49459DiVA: diva2:270355
8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, October 10-15, 1999