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Dynamic avalanche and trapped charge in 4H-SiC diodes
KTH, Dept Elect, SE-16440 Kista, Sweden ABb Corp Res, SE-72178 Vasteras, Sweden Linkoping Univ, SE-58183 Linkoping, Sweden.
KTH, Dept Elect, SE-16440 Kista, Sweden ABb Corp Res, SE-72178 Vasteras, Sweden Linkoping Univ, SE-58183 Linkoping, Sweden.
KTH, Dept Elect, SE-16440 Kista, Sweden ABb Corp Res, SE-72178 Vasteras, Sweden Linkoping Univ, SE-58183 Linkoping, Sweden.
KTH, Dept Elect, SE-16440 Kista, Sweden ABb Corp Res, SE-72178 Vasteras, Sweden Linkoping Univ, SE-58183 Linkoping, Sweden.
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2000 (English)In: Materials Science Forum, Vols. 338-342, 2000, Vol. 338-3, 1327-1330 p.Conference paper, Published paper (Refereed)
Abstract [en]

A dynamically reduced breakdown voltage from more than 2 kV under static conditions to 300 V during reverse recovery was measured for 4H-SiC p(+)nn(+) diodes. Device simulation indicates that deep hole-trapping donors in the n-base, close the pn junction, could explain the dynamically reduced breakdown voltage. Hole traps situated 0.66 eV above the valence band were found in the diode n-base by DLTS measurements.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 1327-1330 p.
Series
Materials Science Forum, ISSN 1662-9752 ; 338 - 342
Keyword [en]
carrier traps, dynamic avalanche, impact ionization, reverse recovery
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49459DOI: 10.4028/www.scientific.net/MSF.338-342.1327ISBN: 9780878498543 (print)OAI: oai:DiVA.org:liu-49459DiVA: diva2:270355
Conference
8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, October 10-15, 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-01-13

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Bergman, Peder

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