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Low-energy-ion-assisted reactive sputter deposition of epitaxial AlN thin films on 6H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology.ORCID iD: 0000-0003-2749-8008
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2000 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, 1519-1522 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial wurzite-structure AIN thin films have been grown on 6H-SiC substrates by ultra-high-vacuum (UHV) low-energy-ion-assisted reactive de magnetron sputtering. The quality of epitaxial AIN films is significantly improved by low-energy ion assistance (E-i = 17-27 eV), during reactive magnetron sputter growth on vicinal (3.5 degrees) 6H-SiC. The ion-assisted growth results in an increased surface mobility, which promotes domain boundary annihilation and epitaxial growth. This results in lateral expansion of column width. Thus, AIN films with domains as large as 40 nm at the interface to 6H-SiC can be realized. At film thickness above 100 nm, the column width expands to 100 nm. The crystal quality of the films is very good with low background impurities (O: 3.5x10 (18)cm(-3)).

Place, publisher, year, edition, pages
2000. Vol. 338-3, 1519-1522 p.
Keyword [en]
6H-SiC, AlN, cathodoluminescence, epitaxial, sputtering, TEM, XRD
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49461OAI: oai:DiVA.org:liu-49461DiVA: diva2:270357
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Tungasmita, SukkanestePersson, PerJärrendahl, KennethHultman, LarsBirch, Jens

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