Porous anodic 4H-SiC: Thickness dependent anisotropy in pore propagation and ellipsometric characterization
2000 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 182, no 1, 213-219 p.Article in journal (Refereed) Published
Pores in porous 4H-SiC propagate first nearly parallel with the sample surface and gradually change direction tc,wards the direction of the c-axis. A disordered region at the interface between crystalline SiC and the pores is encountered ed, which significantly influences the optical response of the material. Thickness and porosity of porous SIC as obtained using variable angle of incidence spectroscopic ellipsometry show good agreement with electron microscopy observations.
Place, publisher, year, edition, pages
2000. Vol. 182, no 1, 213-219 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49486OAI: oai:DiVA.org:liu-49486DiVA: diva2:270382