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Porous anodic 4H-SiC: Thickness dependent anisotropy in pore propagation and ellipsometric characterization
Linkoping Univ, Lab Appl Opt, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Univ Nebraska, Ctr Microelect & Opt Mat Res, Lincoln, NE 68588 USA Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .ORCID iD: 0000-0001-9229-2028
2000 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 182, no 1, 213-219 p.Article in journal (Refereed) Published
Abstract [en]

Pores in porous 4H-SiC propagate first nearly parallel with the sample surface and gradually change direction tc,wards the direction of the c-axis. A disordered region at the interface between crystalline SiC and the pores is encountered ed, which significantly influences the optical response of the material. Thickness and porosity of porous SIC as obtained using variable angle of incidence spectroscopic ellipsometry show good agreement with electron microscopy observations.

Place, publisher, year, edition, pages
2000. Vol. 182, no 1, 213-219 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-49486OAI: diva2:270382
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2013-10-14

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