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Recent developments in the III-nitride materials
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
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2007 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 244, no 6, 1759-1768 p.Article in journal (Refereed) Published
Abstract [en]

We review a selection of recent research work on III-nitride materials, limiting the scope to bulk properties and quantum well structures. The different stages of development of the compounds AlN, GaN and InN are illustrated, with reference to the electronic properties demonstrated so far. The important alloy systems AlxGa1-xN and InxGa1-x have quite different properties, still not understood in detail for high Al and In contents, respectively. Some important unresolved issues are highlighted, and possible future directions of the materials development are indicated. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

Place, publisher, year, edition, pages
Weinheim, Germany: Wiley-VCH Verlagsgesellschaft, 2007. Vol. 244, no 6, 1759-1768 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49488DOI: 10.1002/pssb.200674836ISI: 000247328200001OAI: oai:DiVA.org:liu-49488DiVA: diva2:270384
Conference
International Workshop on Nitride Semiconductors 2006 (IWN 2006), Kyoto, Japan, October 22-27 2006
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12Bibliographically approved

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Monemar, BoPaskov, PlamenBergman, Peder

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