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Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
Linkoping Univ, S-58183 Linkoping, Sweden Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia Univ Sofia, Fac Phys, BU-1164 Sofia, Bulgaria.
Linkoping Univ, S-58183 Linkoping, Sweden Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia Univ Sofia, Fac Phys, BU-1164 Sofia, Bulgaria.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2000 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 88, no 11, 6252-6259 p.Article in journal (Refereed) Published
Abstract [en]

The dislocation structure of hydride vapor phase epitaxial thick GaN layers grown on sapphire is studied by analysis of the microdistortion tensor components. Symmetrical reflections (including reflections from planes forming a large angle with the basal plane) with two modes of scanning (theta and theta -2 theta) in two geometries (Bragg and Laue) are used to obtain the tensor components. The instant connections between the tensor components and major dislocation types are specified. Different types of dislocation distributions have been identified in the thick GaN films grown on sapphire with and without undoped and Si-doped metalorganic chemical vapor deposited templates. Transmission electron microscopy was used to confirm the x-ray results by direct visualization of defect rearrangements. (C) 2000 American Institute of Physics. [S0021-8979(00)06023-0].

Place, publisher, year, edition, pages
2000. Vol. 88, no 11, 6252-6259 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49503OAI: oai:DiVA.org:liu-49503DiVA: diva2:270399
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Shubina, TatianaPaskova, TanjaMonemar, Bo

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