liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linkoping Univ, IFM, S-58183 Linkoping, Sweden Univ Sofia, Fac Phys, Sofia 1164, Bulgaria Aixtron AG, D-52072 Aachen, Germany.
Show others and affiliations
2000 (English)Conference paper, Published paper (Refereed)
Abstract [en]

We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN 'template' layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measurements shows an absence of highly doped columnar structures which are typically present in thick HVPE-GaN films grown directly on sapphire. This improved structure results in a reduction of two orders of magnitude of the free carrier concentration from Hall measurements. It was found that the structure, morphology, electrical and optical properties of homoepitaxial thick GaN layers grown by HVPE were strongly influenced by the properties of the MOCVD-GaN 'template'. Additionally the effect of Si doping of the GaN buffer layers on the HVPE-GaN properties was analysed.

Place, publisher, year, edition, pages
Warrendale: Materials Research Society, 2000. Vol. 5
Series
Materials Research Society Symposium Procedings, ISSN 0272-9172 ; 595
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49514DOI: 10.1557/PROC-595-F99W3.14ISBN: 155899503X (print)OAI: oai:DiVA.org:liu-49514DiVA: diva2:270410
Conference
MRS'99 Fall Meeting, Boston, USA, 29 November - 3 December 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-03-09

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Paskova, TanjaTungasmita, SukkanestePersson, PerHenry, AnneMonemar, Bo

Search in DiVA

By author/editor
Paskova, TanjaTungasmita, SukkanestePersson, PerHenry, AnneMonemar, Bo
By organisation
The Institute of TechnologyDepartment of Physics, Chemistry and BiologyThin Film PhysicsSemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 137 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf