Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa1-xAs quantum-well structures
2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 16, 10984-10989 p.Article in journal (Refereed) Published
Symmetrically modulation doped GaAs/AlxGa1-xAs quantum-well structures, containing a monolayer thickness of single AlAs insertion in the well region, are studied by photoluminescence spectroscopy and electrical characterization. The aim of this study is to explore how the AlAs insertion influences the electronic properties of the structures and the mobility of the carrier confined in the well layer. We find that the electronic structure of the confined electrons is strongly influenced by the AlAs insertion in the modulation doped structures. The effective mass of the particles involved in the observed optical transition and the transition energy were deduced from magneto-optical measurements, while the mobility and carrier concentration were, obtained from the Hall measurements. The experimentally deduced transition energies are compared with the results from a simple self-consistent calculation.
Place, publisher, year, edition, pages
2000. Vol. 62, no 16, 10984-10989 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49547DOI: 10.1103/PhysRevB.62.10984OAI: oai:DiVA.org:liu-49547DiVA: diva2:270443