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Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Aixtron AG, D-52072 Aachen, Germany.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2000 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 88, no 10, 5729-5732 p.Article in journal (Refereed) Published
Abstract [en]

Two different types of dislocation arrangements have been observed in hydride vapor-phase epitaxial GaN films grown on sapphire substrates using both undoped and Si-doped GaN templates grown by metalorganic chemical vapor deposition: (i) predominantly straight threading dislocations parallel to the [0001] direction in the layer grown on an undoped template, and (ii) a network of interacting dislocations of edge, screw, and mixed character in the layer grown on a Si-doped template. The two types of defect distribution result in essentially different surface morphologies, respectively: (i) low-angle grain boundaries formed by pure edge dislocations around spiral grown hillocks, and (ii) smooth surface intersected by randomly distributed dislocations. The Si doping of the GaN templates was found to enhance defect interaction in the templates and to enable a reduction of the dislocation density in the overgrown thick GaN films, although it does not lead to an improvement of the overall structural properties of the material. (C) 2000 American Institute of Physics. [S0021-8979(00)08422-X].

Place, publisher, year, edition, pages
2000. Vol. 88, no 10, 5729-5732 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49550OAI: oai:DiVA.org:liu-49550DiVA: diva2:270446
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskova, TanjaBirch, JensTungasmita, SukkanestePersson, PerMonemar, Bo

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