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Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-2749-8008
NC State University, Box 8202, Raleigh, NC 26795, USA.
NC State University, Box 8202, Raleigh, NC 26795, USA.
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2000 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 464, no 1, L703-L707 p.Article in journal (Refereed) Published
Abstract [en]

Spectroscopic ellipsometry (SE) was used to assess the removal of overlayer material from 4H-SiC (0001) and (0001) [Si- and C-face] surfaces in real time and, in particular, the critical final step of an otherwise standard RCA cleaning regimen commonly used to prepare SiC surfaces for contact formation. The treatments selected [buffered hydrofluoric acid (HF), concentrated HF, and dilute HF] removed 4-40 Angstrom of effective SiO2 overlayer thickness from these surfaces. The concentrated HF treatment yielded the best surface, i.e. that with the most abrupt transition region between bulk and surface and with the most oxide material removed. A fourth treatment regimen (sequential application of methanol, water, and 5% HF in methanol) was also developed for comparison with the full RCA clean. (C) 2000 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier , 2000. Vol. 464, no 1, L703-L707 p.
Keyword [en]
Contact, ellipsometry, etching, semiconducting surfaces, silicon carbide, vicinal single crystal surfaces
National Category
Natural Sciences
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URN: urn:nbn:se:liu:diva-49575DOI: 10.1016/S0039-6028(00)00689-0OAI: oai:DiVA.org:liu-49575DiVA: diva2:270471
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12Bibliographically approved

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Järrendahl, Kenneth

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