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Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
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2000 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 34, no 10, 1133-1136 p.Article in journal (Refereed) Published
Abstract [en]

The parameters of deep-level centers in lightly doped 4H-SiC epilayers grown by sublimational epitaxy and CVD were investigated. Two deep-level centers with activation energies E-c - 0.18 eV and E-c - 0.65 eV (Z1 center) were observed and tentatively identified with structural defects of the SiC crystal lattice. The Z1 center concentration is shown to fall with decreasing uncompensated donor concentration N-d - N-a in the layers. For the same N-d - N-a, the Z1 center concentration is lower in layers with a higher dislocation density. (C) 2000 MAIK "Nauka/Interperiodica".

Place, publisher, year, edition, pages
2000. Vol. 34, no 10, 1133-1136 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49581OAI: oai:DiVA.org:liu-49581DiVA: diva2:270477
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Lebedev, AlexanderYakimova, RositsaSyväjärvi, MikaelJanzén, Erik

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Lebedev, AlexanderYakimova, RositsaSyväjärvi, MikaelJanzén, Erik
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