Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
2000 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, Vol. 34, no 10, 1133-1136 p.Article in journal (Refereed) Published
The parameters of deep-level centers in lightly doped 4H-SiC epilayers grown by sublimational epitaxy and CVD were investigated. Two deep-level centers with activation energies E-c - 0.18 eV and E-c - 0.65 eV (Z1 center) were observed and tentatively identified with structural defects of the SiC crystal lattice. The Z1 center concentration is shown to fall with decreasing uncompensated donor concentration N-d - N-a in the layers. For the same N-d - N-a, the Z1 center concentration is lower in layers with a higher dislocation density. (C) 2000 MAIK "Nauka/Interperiodica".
Place, publisher, year, edition, pages
2000. Vol. 34, no 10, 1133-1136 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49581OAI: oai:DiVA.org:liu-49581DiVA: diva2:270477