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High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy
Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden.
Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2000 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 77, no 14, 2186-2188 p.Article in journal (Refereed) Published
Abstract [en]

High carbon concentrations at distinct regions at thermally-grown SiO2/6H-SiC(0001) interfaces have been detected by electron energy loss spectroscopy (EELS). The thickness of these C-rich regions is estimated to be 10-15 Angstrom. The oxides were grown on n-type 6H-SiC at 1100 degrees C in a wet O-2 ambient for 4 h immediately after cleaning the substrates with the complete RCA process. In contrast, C-rich regions were not detected from EELS analyses of thermally grown SiO2/Si interfaces nor of chemical vapor deposition deposited SiO2/SiC interfaces. Silicon-rich layers within the SiC substrate adjacent to the thermally grown SiO2/SiC interface were also evident. The interface state density D-it in metal-oxide-SiC diodes (with thermally grown SiO2) was approximately 9x10(11) cm(-2) eV(-1) at E- E-v=2.0 eV, which compares well with reported values for SiC metal-oxide-semiconductor (MOS) diodes that have not received a postoxidation anneal. The C-rich regions and the change in SiC stoichiometry may be associated with the higher than desirable D-it's and the low channel mobilities in SiC-based MOS field effect transistors. (C) 2000 American Institute of Physics. [S0003-6951(00)01940-9].

Place, publisher, year, edition, pages
2000. Vol. 77, no 14, 2186-2188 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49586OAI: oai:DiVA.org:liu-49586DiVA: diva2:270482
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-14

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Porter, LisaWahab, Qamar Ul

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