Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
2007 (English)In: Technical physics letters, ISSN 1063-7850, E-ISSN 1090-6533, Vol. 33, no 6, 524-526 p.Article in journal (Refereed) Published
Epitaxial 3C-SiC films grown on the (0001)C face of 6H-SiC substrates by sublimation epitaxy in vacuum have been studied. The results of x-ray diffraction measurements show evidence of a rather high structural perfection of silicon carbide epilayers. The Raman spectroscopy data confirm that the 3C-SiC layer grows immediately on the 6H-SiC substrate without any transition layers. It is concluded that the structures under consideration are well suited for the investigation of a two-dimensional electron gas at the 3C-SiC/6C-SiC heterojunction. © Nauka/Interperiodica 2007.
Place, publisher, year, edition, pages
2007. Vol. 33, no 6, 524-526 p.
IdentifiersURN: urn:nbn:se:liu:diva-49599DOI: 10.1134/S1063785007060235OAI: oai:DiVA.org:liu-49599DiVA: diva2:270495