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Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
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2007 (English)In: Technical physics letters, ISSN 1063-7850, E-ISSN 1090-6533, Vol. 33, no 6, 524-526 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial 3C-SiC films grown on the (0001)C face of 6H-SiC substrates by sublimation epitaxy in vacuum have been studied. The results of x-ray diffraction measurements show evidence of a rather high structural perfection of silicon carbide epilayers. The Raman spectroscopy data confirm that the 3C-SiC layer grows immediately on the 6H-SiC substrate without any transition layers. It is concluded that the structures under consideration are well suited for the investigation of a two-dimensional electron gas at the 3C-SiC/6C-SiC heterojunction. © Nauka/Interperiodica 2007.

Place, publisher, year, edition, pages
2007. Vol. 33, no 6, 524-526 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-49599DOI: 10.1134/S1063785007060235OAI: oai:DiVA.org:liu-49599DiVA: diva2:270495
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Yakimova, Rositsa

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