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Si/SiGe electron resonant tunneling diodes
Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England Linkoping Univ, Dept Phys & Measurement Sci, S-58183 Linkoping, Sweden LEO Elektronenmikroskopie GmbH, D-73446 Oberkochen, Germany KFA Julich GmbH, Forschungszentrum, Inst Schicht & Ionentech, D-52425 Julich, Germany Linkoping Univ, Dept Sci & Technol, S-60174 Norrkoping, Sweden.
Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England Linkoping Univ, Dept Phys & Measurement Sci, S-58183 Linkoping, Sweden LEO Elektronenmikroskopie GmbH, D-73446 Oberkochen, Germany KFA Julich GmbH, Forschungszentrum, Inst Schicht & Ionentech, D-52425 Julich, Germany Linkoping Univ, Dept Sci & Technol, S-60174 Norrkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 77, no 11, 1653-1655 p.Article in journal (Refereed) Published
Abstract [en]

Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm(2) with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer. (C) 2000 American Institute of Physics. [S0003- 6951(00)02337-8].

Place, publisher, year, edition, pages
2000. Vol. 77, no 11, 1653-1655 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49607OAI: oai:DiVA.org:liu-49607DiVA: diva2:270503
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Zozoulenko, IgorBerggren, Karl-Fredrik

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