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Multiple peak spectra from InGaN/GaN multiple quantum wells
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-9840-7364
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan.
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan.
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan.
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2000 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 180, no 1, 85-89 p.Article in journal (Refereed) Published
Abstract [en]

Optical properties of In0.12Ga0.88N/GaN multiple quantum well (MQW) structures grown by metalorganic vapor phase epitaxy at 820 degrees C are reported. The transmission electron microscopy measurements show a roughness of the sample surfaces containing small pit like defects of a size 100 to 200 Angstrom with a density far exceeding the dislocation density. The photoluminescence (PL) spectra in this set of samples are dominated by strong multiple peak emissions associated both with the MQW exciton recombination and with strongly localized states of energies much lower than the QW bandgap. We suggest that the low energy PL peaks are due to (i) photocarriers localized in quantum islands closely related to the threading dislocations, and possibly associated with V-defect induced side-wall QWs, (ii) strongly localized excitons in OD quantum dots in the disordered surface region, formed by uncontrolled surface etching processes.

Place, publisher, year, edition, pages
2000. Vol. 180, no 1, 85-89 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:liu:diva-49638OAI: oai:DiVA.org:liu-49638DiVA: diva2:270534
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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