liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Polytype stability in seeded sublimation growth of 4H-SiC boules
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Show others and affiliations
2000 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 217, no 3, 255-262 p.Article in journal (Refereed) Published
Abstract [en]

Process conditions for stable single polytype growth of 4H-SiC boules via a seeded sublimation technique have been developed. Reproducible results can be obtained in a narrow temperature interval around 2350 degrees C and on the C-face of 4H-SiC seeds. Evidence is presented that during the initial stage of growth, morphological instabilities may occur resulting in structural defects. A solution is proposed based on the experimental findings, i.e. the first regions of growth ought to be carried out at a low supersaturation (growth rate similar to 100 mu m/h) until a proper growth front has developed. (C) 2000 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2000. Vol. 217, no 3, 255-262 p.
Keyword [en]
4H-SiC, sublimation growth, morphological instability, polytype uniformity
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49651OAI: oai:DiVA.org:liu-49651DiVA: diva2:270547
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

Open Access in DiVA

No full text

Authority records BETA

Yakimova, RositsaSyväjärvi, MikaelIakimov, TihomirJacobsson, HenrikJanzén, Erik

Search in DiVA

By author/editor
Yakimova, RositsaSyväjärvi, MikaelIakimov, TihomirJacobsson, HenrikJanzén, Erik
By organisation
The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
In the same journal
Journal of Crystal Growth
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 114 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf