Polytype stability in seeded sublimation growth of 4H-SiC boules
2000 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 217, no 3, 255-262 p.Article in journal (Refereed) Published
Process conditions for stable single polytype growth of 4H-SiC boules via a seeded sublimation technique have been developed. Reproducible results can be obtained in a narrow temperature interval around 2350 degrees C and on the C-face of 4H-SiC seeds. Evidence is presented that during the initial stage of growth, morphological instabilities may occur resulting in structural defects. A solution is proposed based on the experimental findings, i.e. the first regions of growth ought to be carried out at a low supersaturation (growth rate similar to 100 mu m/h) until a proper growth front has developed. (C) 2000 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2000. Vol. 217, no 3, 255-262 p.
4H-SiC, sublimation growth, morphological instability, polytype uniformity
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49651OAI: oai:DiVA.org:liu-49651DiVA: diva2:270547