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Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 4688502, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan.
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, no 23, 3388-3390 p.Article in journal (Refereed) Published
Abstract [en]

The effect of In surfactant during metalorganic vapor phase epitaxial growth on sapphire substructure on the properties of GaN layers is studied using time-resolved photoluminescence. cathodoluminescence. and scanning electron microscopy. The samples are divided into two groups. where hydrogen and nitrogen, respectively, have been used as a carrier gas during growth. It is shown that In-doped samples have a lower dislocation density, a narrower photoluminescence linewidth, and a longer foe exciton lifetime. The influence of indium is stronger for GaN layers grown in nitrogen-rich conditions. The improvements of structural and optical properties are attributed to the effect of In on dislocations. (C) 2000 American Institute of Physics. [S0003-6951(00)02723-6].

Place, publisher, year, edition, pages
2000. Vol. 76, no 23, 3388-3390 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49717OAI: oai:DiVA.org:liu-49717DiVA: diva2:270613
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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