Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
2000 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 76, no 23, 3388-3390 p.Article in journal (Refereed) Published
The effect of In surfactant during metalorganic vapor phase epitaxial growth on sapphire substructure on the properties of GaN layers is studied using time-resolved photoluminescence. cathodoluminescence. and scanning electron microscopy. The samples are divided into two groups. where hydrogen and nitrogen, respectively, have been used as a carrier gas during growth. It is shown that In-doped samples have a lower dislocation density, a narrower photoluminescence linewidth, and a longer foe exciton lifetime. The influence of indium is stronger for GaN layers grown in nitrogen-rich conditions. The improvements of structural and optical properties are attributed to the effect of In on dislocations. (C) 2000 American Institute of Physics. [S0003-6951(00)02723-6].
Place, publisher, year, edition, pages
2000. Vol. 76, no 23, 3388-3390 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49717OAI: oai:DiVA.org:liu-49717DiVA: diva2:270613