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High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions
Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa Gothenburg Univ, S-41296 Gothenburg, Sweden Natl Def Res Estab, Dept Microwave Technol, S-58111 Linkoping, Sweden Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden.
Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa Gothenburg Univ, S-41296 Gothenburg, Sweden Natl Def Res Estab, Dept Microwave Technol, S-58111 Linkoping, Sweden Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.ORCID iD: 0000-0001-6235-7038
Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa Gothenburg Univ, S-41296 Gothenburg, Sweden Natl Def Res Estab, Dept Microwave Technol, S-58111 Linkoping, Sweden Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden.
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 76, no 25, 3750-3752 p.Article in journal (Refereed) Published
Abstract [en]

We report on the electrical properties of defects introduced by high-energy 5.4 MeV He ions in n-type strained n-SiGe and the impact of this irradiation on the noise properties of Pd/n-Si1-xGex Schottky barrier diodes (SBDs). From the deep level transient spectroscopy measurements, the main defects EA1 and EA2 are observed in both Si and Si0.96Ge0.04 and have energy levels at 0.24 and 0.44 eV, respectively, below the conduction band. EA1 and EA2 have been correlated with the V-V and the P-V pairs, respectively. For both defects EA1 and EA2, the energy level position is found to be the same for x = 0 and 0.04, indicating that such levels are pinned to the conduction band. Furthermore, the impact of the high-energy He-ion irradiation on the electrical noise properties of Pd/n-Si1-xGex SBDs is also studied. From the noise experimental data, the main noise source observed in these irradiated diodes was attributed to the generation-recombination noise inducing an abnormal peak in their noise spectra at around f(1) = 180 Hz. This peak is found to be independent of Ge concentration. (C) 2000 American Institute of Physics. [S0003-6951(00)02125-2].

Place, publisher, year, edition, pages
2000. Vol. 76, no 25, 3750-3752 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49718OAI: oai:DiVA.org:liu-49718DiVA: diva2:270614
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-01-15

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Willander, MagnusOuacha, Aziz

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