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Electrostatic powder impact deposition (EPID) of Ge on Si and Cu substrates, microstructure and morphology study
Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland Linkoping Univ, Thin Film Phys Grp, S-58183 Linkoping, Sweden.
Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland Linkoping Univ, Thin Film Phys Grp, S-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .ORCID iD: 0000-0002-1744-7322
2000 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 33, no 10, 1155-1160 p.Article in journal (Refereed) Published
Abstract [en]

Electrostatic powder impact deposition (EPID) is a novel method to deposit thin films by electrostatic acceleration of powder material between charged plates in vacuum. The EPID method has been used to deposit Ce films on Si and Cu substrates at room temperature. Surface morphology and microstructure as studied by SEM showed a very rough surface. XRD and RES measurements revealed that the films were mostly nanocrystalline or amorphous ae oxide. The grain size distribution of the Ge powder was measured before and after deposition. Initial distribution showed a median grain size of 32 mu m and distribution width of 80 mu m. After the deposition the median grain size had decreased to 16 mu m acid the width decreased to 55 mu m. The grain size of the deposited film was less than 1 mu m.

Place, publisher, year, edition, pages
2000. Vol. 33, no 10, 1155-1160 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49733OAI: oai:DiVA.org:liu-49733DiVA: diva2:270629
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Helmersson, Ulf

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