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van der Waals energy of an atom in the proximity of thin metal films
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .ORCID iD: 0000-0002-6281-868X
2000 (English)In: Physical Review A. Atomic, Molecular, and Optical Physics, ISSN 1050-2947, E-ISSN 1094-1622, Vol. 61, no 5, art. no.-052703 p.Article in journal (Refereed) Published
Abstract [en]

The van der Waals energy of a ground-state atom (or molecule) placed between two metal films is calculated at finite temperature. The attraction between thin metal films and a polarizable object can have half-integer separation dependence. This is in contrast to the usual integer separation dependence, shown for instance in the attraction between an atom and a solid surface. We examine how film thickness, retardation, and temperature influence the interaction. To illustrate the effect of finite thickness of the metal film we calculated the van der Waals energy of ground-state hydrogen and helium atoms, and hydrogen molecules, between thin silver films. We finally, briefly, discuss the possibility to measure this effect.

Place, publisher, year, edition, pages
2000. Vol. 61, no 5, art. no.-052703 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49751OAI: oai:DiVA.org:liu-49751DiVA: diva2:270647
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Boström, MathiasSernelius, Bo

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