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Current status of silicon carbide based high-temperature gas sensors
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics.ORCID iD: 0000-0002-2817-3574
Linkoping Univ, S SENCE, S-58183 Linkoping, Sweden Linkoping Univ, Appl Phys Lab, S-58183 Linkoping, Sweden.
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1999 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 46, no 3, 561-566 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SIC) based field effect gas sensors can be operated at very high temperatures. Catalytic metal-insulator-silicon carbide (MISiC) Schottky diodes respond very fast to a change between a reducing and an oxidizing atmosphere, and cylinder-specific combustion engine monitoring has been demonstrated. The sensors have also been suggested for high-temperature electronic nose applications. Car applications and other harsh environments put very strong requirements on the long-term stability of the sensors. Here rye review the current status of the field of SiC based Schottkg diode gas sensors with emphasis on the work in our group. Basic work on understanding of the detection mechanism and the influence of interfacial layers on the long-term stability of the sensors is reviewed, The direction of future research and device development in our group is also discussed.

Place, publisher, year, edition, pages
1999. Vol. 46, no 3, 561-566 p.
Keyword [en]
exhaust, gas detectors, interfacial layers, Schottky diodes, silicon carbide, thermal factors, transducers
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-49771ISI: 000086784900020OAI: diva2:270667
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-01-09

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