liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures
Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
Show others and affiliations
1999 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 46, no 3, 605-611 p.Article in journal (Refereed) Published
Abstract [en]

The formation of low resistivity Pd-based ohmic contacts to p-type 4H-SiC below 750 degrees C are reported herein, The electrical properties of the contacts were examined using I-V measurements and the transmission-line model (TLM) technique. Contact resistivity as a function of annealing was investigated over the temperature range of 600 degrees C-700 degrees C, The lowest contact resistivity (5.5 x 10(-5) Ohm cm(2)) was obtained after annealing at 700 degrees C for 5 min, Atomic force microscopy of the as-deposited Pd layer showed a root-mean square roughness of similar to 8 nm, while after annealing at 700 degrees C, agglomeration occurred, increasing the roughness to 111 nm, Auger electron spectroscopy depth profiles revealed that with annealing, interdiffusion had resulted in the formation of Pd-rich silicides. However, X-ray diffraction and Rutherford backscattering showed that the majority of the film was still (unreacted) Pd. The thermal stability and reliability of the Pd contacts were examined by aging and temperature dependence electrical tests, The contacts annealed at 700 OC were stable at prolonged heating at a constant temperature of 500 degrees C and they showed thermal stability in air at operating temperatures up to 450 degrees C, This stability was not found for contacts formed at lower temperatures of 600 degrees C or 650 degrees C.

Place, publisher, year, edition, pages
1999. Vol. 46, no 3, 605-611 p.
Keyword [en]
ohmic contact, silicon carbide, thermal stability
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-49772OAI: oai:DiVA.org:liu-49772DiVA: diva2:270668
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

Open Access in DiVA

No full text

In the same journal
IEEE Transactions on Electron Devices
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 16 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf