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Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden ABB Corp Res, S-72178 Vasteras, Sweden Univ Sci & Tech Lille Flandres Artois, F-59665 Villeneuve Dascq, France.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 76, no 19, 2725-2727 p.Article in journal (Refereed) Published
Abstract [en]

Morphological defects and elementary screw dislocations in 4H-SiC were studied by high voltage Ni Schottky diodes. Micropipes were found to severely limit the performance of 4H-SiC power devices, whereas carrot-like defects did not influence the value of breakdown voltage. The screw dislocation density as determined by x-ray topography analysis under the active area of the diode was also found to directly affect the breakdown voltage. Only diodes with low density of screw dislocations and free from micropipes could block 2 kV or higher. (C) 2000 American Institute of Physics. [S0003-6951(00)01119-0].

Place, publisher, year, edition, pages
2000. Vol. 76, no 19, 2725-2727 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49774OAI: oai:DiVA.org:liu-49774DiVA: diva2:270670
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Wahab, Qamar UlHenry, AnneJanzén, ErikHallin, Christer

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