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Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1-xGex Schottky contacts
Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Gothenburg, S-41296 Gothenburg, Sweden Natl Def Res Estab, S-58111 Linkoping, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa.
Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Gothenburg, S-41296 Gothenburg, Sweden Natl Def Res Estab, S-58111 Linkoping, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa.
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2000 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 87, no 8, 3858-3863 p.Article in journal (Refereed) Published
Abstract [en]

The effect of plasma etching on the noise properties of Ti/p-Si and Ti/p-Si1-xGex (with x=0.05) Schottky junctions has been investigated. The noise measurements were performed over a temperature range of 77-300 K at frequencies of 10-100 kHz. The main noise source observed in these diodes during argon plasma sputter etching was attributed to the generation-recombination noise. From the analysis of the noise data, we have determined the interface state density and evaluated the introduced damage. The results indicate two optimum operating temperatures where low-noise level can be achieved. Furthermore, the activation energies of trap levels have been extracted by using noise spectroscopy (NS) and compared with those measured by deep-level transient spectroscopy (DLTS). We found two additional trap states using NS not detected by DLTS measurements. Finally, a noise comparison between Ti/p-Si and Ir/p-Si fabricated on an unetched substrate has been made. (C) 2000 American Institute of Physics. [S0021-8979(00)00608-3].

Place, publisher, year, edition, pages
2000. Vol. 87, no 8, 3858-3863 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-49791OAI: oai:DiVA.org:liu-49791DiVA: diva2:270687
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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