Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
2000 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 76, no 14, 1860-1862 p.Article in journal (Refereed) Published
Thick hydride vapor phase epitaxy GaN layers have been grown on a-plane sapphire using high-temperature ion-assisted reactively sputtered AlN as a buffer layer. Transmission electron microscopy and atomic force microscopy were carried out to study the formation of the two interfaces sapphire/AlN and AlN/GaN, and their influence on the microstructure of both the buffer layer and the main GaN layer. It was demonstrated that the high-temperature reactively sputtered buffer layer provides a good alternative for hydride vapor phase epitaxy growth of GaN layers. In particular, the buffer promotes a specific interface ordering mechanism different from that observed on low-temperature buffers. (C) 2000 American Institute of Physics. [S0003-6951(00)00314-4].
Place, publisher, year, edition, pages
2000. Vol. 76, no 14, 1860-1862 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49811OAI: oai:DiVA.org:liu-49811DiVA: diva2:270707