Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 61, no 4, 2794-2798 p.Article in journal (Refereed) Published
Many-body effects have been optically investigated for modulation-doped quantum wells at high acceptor densities. The observed band-gap shrinkage, up to approximate to 20 meV, is consistent with calculations based on the Hartree and random-phase approximations including the finite well width effect. A recombination near the Fermi edge with light-hole character is strikingly enhanced at high acceptor densities. An interpretation based on carrier-carrier interaction is proposed. Finally, the exciton is found to be quenched for hole densities higher than approximate to 2x10(12) cm(-2).
Place, publisher, year, edition, pages
2000. Vol. 61, no 4, 2794-2798 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49848OAI: oai:DiVA.org:liu-49848DiVA: diva2:270744