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Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Royal Inst Technol, Dept Phys, S-10044 Stockholm, Sweden Inst Electron Technol, PL-02668 Warsaw, Poland.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .ORCID iD: 0000-0002-6281-868X
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, no 4, p. 2794-2798Article in journal (Refereed) Published
Abstract [en]

Many-body effects have been optically investigated for modulation-doped quantum wells at high acceptor densities. The observed band-gap shrinkage, up to approximate to 20 meV, is consistent with calculations based on the Hartree and random-phase approximations including the finite well width effect. A recombination near the Fermi edge with light-hole character is strikingly enhanced at high acceptor densities. An interpretation based on carrier-carrier interaction is proposed. Finally, the exciton is found to be quenched for hole densities higher than approximate to 2x10(12) cm(-2).

Place, publisher, year, edition, pages
2000. Vol. 61, no 4, p. 2794-2798
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49848OAI: oai:DiVA.org:liu-49848DiVA, id: diva2:270744
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Sernelius, BoHoltz, Per-OlofMonemar, Bo

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