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The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation
Royal Inst Technol, S-16440 Kista, Sweden Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86960 Futuroscope, France Natl Def Res Inst, S-58111 Linkoping, Sweden.
Royal Inst Technol, S-16440 Kista, Sweden Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86960 Futuroscope, France Natl Def Res Inst, S-58111 Linkoping, Sweden.
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1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 68, no 2, 67-71 p.Article in journal (Refereed) Published
Abstract [en]

Platinum has been diffused into epitaxial n-type silicon for 30 min at temperatures from 400 to 600 degrees C following room temperature irradiation with 2-MeV electrons at a dose of 1 x 10(17) e(-) cm(-2). Platinum has only been detected by deep level transient spectroscopy (DLTS) following the highest diffusion temperature. For lower temperatures defects, not previously reported. arise which are thought to be of interstitial nature. The two principal defect levels are determined to be located at 0.29 and 0.41 eV below the conduction band. The compensation for the two lowest diffusion temperatures is observed to be extremely strong as manifested by a strong reduction of the steady state reverse bias capacitance during the DLTS measurements. Following thermal treatment at 500 degrees C this capacitance, however, increases. DLTS measurements down to 20 K detected thermal donors as well as a number of other defects not previously reported. Their signatures have been determined by DLTS and TSCap (thermally stimulated capacitance) measurements. The nature of the observed defects is discussed with reference to recent results concerning interstitial defects. (C) 1999 Elsevier Science S.A. All rights reserved.

Place, publisher, year, edition, pages
1999. Vol. 68, no 2, 67-71 p.
Keyword [en]
deep level transient spectroscopy (DLTS), defect, interstitial, annealing, platinum, electron irradiation
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-49880OAI: oai:DiVA.org:liu-49880DiVA: diva2:270776
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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