Step-bunching in 6H-SiC growth by sublimation epitaxy
1999 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, Vol. 11, no 49, 10019-10024 p.Article in journal (Refereed) Published
Thick 6H-SiC epitaxial layers grown by sublimation epitaxy have been investigated concerning step-bunching. The macrostep appearances on the surfaces were studied for both (0001) Si and (000 (1) over bar) C faces. The surface structure on the Si face is less regular compared with the C face. Data on the steps have been collected and the step height shows a linear relation with the step width.
Place, publisher, year, edition, pages
1999. Vol. 11, no 49, 10019-10024 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49895OAI: oai:DiVA.org:liu-49895DiVA: diva2:270791