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Step-bunching in 6H-SiC growth by sublimation epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
1999 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 11, no 49, 10019-10024 p.Article in journal (Refereed) Published
Abstract [en]

Thick 6H-SiC epitaxial layers grown by sublimation epitaxy have been investigated concerning step-bunching. The macrostep appearances on the surfaces were studied for both (0001) Si and (000 (1) over bar) C faces. The surface structure on the Si face is less regular compared with the C face. Data on the steps have been collected and the step height shows a linear relation with the step width.

Place, publisher, year, edition, pages
1999. Vol. 11, no 49, 10019-10024 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49895OAI: oai:DiVA.org:liu-49895DiVA: diva2:270791
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Syväjärvi, MikaelYakimova, RositsaJanzén, Erik

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