Infrared absorption study of a new dicarbon center in silicon
1999 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 274, 256-259 p.Article in journal (Refereed) Published
Infrared absorption measurements on n-type silicon doped with carbon and irradiated with electrons at room temperature have revealed new absorption lines at 527.4 and 748.7 cm(-1). The 748.7 cm(-1) line is observed only when the sample is cooled down in the dark and the spectra are measured through a low-pass filter with cut-off frequency below 6000 cm(-1). Light of frequency above 6000 cm(-1) removes this line and generates the 527.4-cm(-1) line. Spectra recorded on silicon doped with C-13 show that the two lines represent local vibrational modes of a carbon defect. The annealing behavior of the 748.7-cm(-1) line and of the EPR signal of two neighboring substitutional carbon atoms, (C-s-C-s)(-), are identical. The 527.4- and 748.7-cm(-1) modes are identified as the modes of C-s-C-s in neutral and negative charge states, respectively. The formation of C-s-C-s is investigated, and it is shown that the center may arise when a vacancy is trapped by the metastable substitutional carbon-interstitial carbon center, C-s-C-i. (C) 1999 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
1999. Vol. 274, 256-259 p.
silicon, carbon, infrared absorption
IdentifiersURN: urn:nbn:se:liu:diva-49924OAI: oai:DiVA.org:liu-49924DiVA: diva2:270820