liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
1999 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 75, no 26, 4124-4126 p.Article in journal (Refereed) Published
Abstract [en]

Temperature-dependent time-resolved photoluminescence measurements were performed on thick GaN layers grown by hydride vapor-phase epitaxy on Al2O3 substrates. Radiative lifetimes were determined for the neutral-donor-bound exciton with position at 3.478 eV and for two neutral-acceptor-bound excitons at 3.473 and 3.461 eV. We report a value of 3600 ps for the radiative lifetime of the acceptor-bound exciton transition at 3.461 eV. The dominant mechanism responsible for the nonradiative recombination of the bound excitons is shown to be connected with dissociation of the bound excitons into free excitons. (C) 1999 American Institute of Physics. [S0003-6951(99)00752-4].

Place, publisher, year, edition, pages
1999. Vol. 75, no 26, 4124-4126 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49934OAI: oai:DiVA.org:liu-49934DiVA: diva2:270830
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

Open Access in DiVA

No full text

Authority records BETA

Pozina, GaliaPaskova, TanjaMonemar, Bo

Search in DiVA

By author/editor
Pozina, GaliaPaskova, TanjaMonemar, Bo
By organisation
The Institute of TechnologyMaterials Science Department of Physics, Chemistry and Biology
In the same journal
Applied Physics Letters
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 59 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf