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Defect distribution in a-plane GaN on Al2 O3
Laboratory of Physics, Helsinki University of Technology, FI-02015 TKK, Finland.
Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
Kröger, R., Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 12Article in journal (Refereed) Published
Abstract [en]

The authors studied the structural and point defect distributions of hydride vapor phase epitaxial GaN film grown in the [11-20] a direction on (1-102) r -plane sapphire with metal-organic vapor phase deposited a-GaN template using transmission electron microscopy, secondary ion mass spectrometry, and positron annihilation spectroscopy. Grown-in extended and point defects show constant behavior as a function of thickness, contrary to the strong nonuniform defect distribution observed in GaN grown along the [0001] direction. The observed differences are explained by orientation-dependent and kinetics related defect incorporation. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 90, no 12
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49956DOI: 10.1063/1.2715128OAI: oai:DiVA.org:liu-49956DiVA: diva2:270852
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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