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Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy
Laboratory of Physics, Helsinki University of Technology, FI-02015 TKK, Finland.
Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
Institute of Solid State Physics, University of Bremen, D-28359 Bremen, Germany.
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2007 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 300, no 1, 251-253 p.Article in journal (Refereed) Published
Abstract [en]

We have used positron annihilation spectroscopy to study the native vacancy distribution in a-plane heteroepitaxial GaN. We show that the Ga vacancy concentration is independent of the layer thickness in the range from 5 to 25 µ m. This is strikingly different from the behavior in c-plane GaN, where the Ga vacancy concentration decreases dramatically with the distance from the GaN/sapphire interface. This difference in the native vacancy profiles is tentatively correlated with the differences in the O impurity and dislocation density profiles in the polar and non-polar materials. © 2006 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2007. Vol. 300, no 1, 251-253 p.
Keyword [en]
A1. Characterization, A1. Point defects, A3. Hydride vapor phase epitaxy, A3. Metalorganic chemical vapor deposition, B1. Nitrides, B2. Semiconducting gallium compounds
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49970DOI: 10.1016/j.jcrysgro.2006.11.040OAI: oai:DiVA.org:liu-49970DiVA: diva2:270866
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Monemar, Bo

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