Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
2007 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 300, no 1, 32-36 p.Article in journal (Refereed) Published
Growth of 2-inch diameter bulk GaN layers with a thickness up to 2 mm is demonstrated in a vertical hydride vapour phase growth reactor. Morphology, dislocations, optical and electrical properties of the material have been investigated using atomic force microscopy, optical microscopy, decorative etching in hot H3PO4, Hall measurements and low-temperature photoluminescence. Atomic force microscopy reveals a two-dimensional step flow growth mode with step bunching for layers with a thickness of 250 µm. As the growth proceeds, the morphology is changed to a hill and valley structure. The EPD was determined to 5×105 cm-2 for a 2 mm thick layer. The Hall mobility and the carrier concentration were determined. For a 1.7 mm thick layer at 300 K the mobility and the carrier concentration is 520 cm2/V s and about 4×1017 cm-3, respectively. Low-temperature photoluminescence spectra measured on a 350 µm thick freestanding layer show the DBE line at 3.4707 eV with a full-width half-maximum of 1 meV, confirming a stress free GaN layer. © 2006 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2007. Vol. 300, no 1, 32-36 p.
A1. Crystal morphology, A1. Impurities, A2. Growth from vapour, A3. Hydride vapour phase epitaxi, B2. Semiconducting III-V materials
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-49973DOI: 10.1016/j.jcrysgro.2006.10.223OAI: oai:DiVA.org:liu-49973DiVA: diva2:270869