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Interfacial structure of a -plane GaN grown on r -plane sapphire
Kröger, R., Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany.
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany.
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany.
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany.
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 8Article in journal (Refereed) Published
Abstract [en]

The interface between a -plane GaN, grown by metal organic vapor phase epitaxy and hydride vapor phase epitaxy, and r -plane sapphire was investigated by transmission electron microscopy in [1-100] and [0001] zone axis orientations. The interfacial structure was well defined allowing a direct observation of the misfit dislocations in both orientations. An analysis of these dislocations revealed for the respective Burgers vectors a 13 <2-1-10> component in the {0002} planes and a 12 <0001> component in the {1-100} planes. In addition, the relative atomic column configurations in the GaN and sapphire were determined based on Bloch-wave simulations in comparison with the experimental images. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 90, no 8
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-49990DOI: 10.1063/1.2696309OAI: oai:DiVA.org:liu-49990DiVA: diva2:270886
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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