Electrical resistivity and metal-nonmetal transition in n -type doped 4H-SiC
2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 74, no 24, 245201- p.Article in journal (Refereed) Published
The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10- 700 K for nitrogen concentrations between 3.5× 1015 and 5× 1019 cm-3. For the highest doped samples, a good agreement is found between the experimental resistivity and the values calculated from a generalized Drude approach at similar dopant concentration and temperature. From these results, the critical concentration (Nc) of nitrogen impurities which corresponds to the metal-nonmetal transition in 4H-SiC is deduced. We find Nc ~ 1019 cm-3. © 2006 The American Physical Society.
Place, publisher, year, edition, pages
2006. Vol. 74, no 24, 245201- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50038DOI: 10.1103/PhysRevB.74.245201OAI: oai:DiVA.org:liu-50038DiVA: diva2:270934
Da Silva A. Ferreira, J. Pernot, S. Contreras, Bo Sernelius, C. Persson and J. Camassel, Electrical resistivity and metal-nonmetal transition in n -type doped 4H-SiC, 2006, Physical Review B. Condensed Matter and Materials Physics, (74), 24, 245201.
Copyright: American Physical Society