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Epitaxial stabilization of cubic- SiNx in TiN/SiNx multilayers
Söderberg, H., Division of Engineering Materials, Luleå University of Technology, SE-971 87 Luleå, Sweden.
Odán, M., Division of Engineering Materials, Luleå University of Technology, SE-971 87 Luleå, Sweden.ORCID iD: 0000-0002-2286-5588
Ombenning by 14, SE-737 90 Ängelsberg, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 19Article in journal (Refereed) Published
Abstract [en]

The formation of cubic-phase Si Nx is demonstrated in TiNSi Nx multilayers deposited by reactive dual magnetron sputtering. Transmission electron microscopy examination shows a transition from epitaxially stabilized growth of crystalline Si Nx to amorphous growth as the layer thickness increases from 0.3 to 0.8 nm. The observations are supported by ab initio calculations on different polytypes, which show that the NaCl structure has the best lattice match to TiN. Calculations also reveal a large difference in elastic shear modulus between NaCl-Si Nx and TiN. The results for phase structure and shear modulus offer an explanation for the superhardening effect determined by nanoindentation experiments. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 88, no 19
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-50075DOI: 10.1063/1.2202145OAI: diva2:270971
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

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