Toward silicon-based lasers for terahertz sources
2006 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, Vol. 12, no 6, 1570-1577 p.Article in journal (Refereed) Published
Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.
Place, publisher, year, edition, pages
2006. Vol. 12, no 6, 1570-1577 p.
Boron, Far infrared, Germanium, Impurity, Lifetime, Phosphorus, Pump-probe, Quantum cascade laser, Resonant tunneling diode (RTD), Silicon, Suicide, Terahertz, Waveguide
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50083DOI: 10.1109/JSTQE.2006.884069OAI: oai:DiVA.org:liu-50083DiVA: diva2:270979