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Toward silicon-based lasers for terahertz sources
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
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2006 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 12, no 6, 1570-1577 p.Article in journal (Refereed) Published
Abstract [en]

Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.

Place, publisher, year, edition, pages
2006. Vol. 12, no 6, 1570-1577 p.
Keyword [en]
Boron, Far infrared, Germanium, Impurity, Lifetime, Phosphorus, Pump-probe, Quantum cascade laser, Resonant tunneling diode (RTD), Silicon, Suicide, Terahertz, Waveguide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-50083DOI: 10.1109/JSTQE.2006.884069OAI: oai:DiVA.org:liu-50083DiVA: diva2:270979
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Zhao, MingNi, Wei-Xin

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