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Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2006 (English)In: Thin Solid Films, Vol. 515, 2006, Vol. 515, no 2 SPEC. ISS., 460-463 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on the growth of thin, n-type, 4H-SiC epilayers on (0001) 4H-SiC substrates with uniform doping depth profile. The initial etching of the material before growth is studied to avoid affecting the starting material in the case of regrowth. Variation of the growth rate and its effect on nitrogen incorporation during the first few minutes of the growth have been studied using delta doped demarcation layers. Different growth conditions at the beginning of the growth have been tested in order to grow abrupt layers with a flat doping profile with a variation < ± 1%. © 2005 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 515, no 2 SPEC. ISS., 460-463 p.
Keyword [en]
Abrupt layers, Epitaxy, Hot-wall CVD, SiC, Thin films, Uniform doping
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-50102DOI: 10.1016/j.tsf.2005.12.262OAI: oai:DiVA.org:liu-50102DiVA: diva2:270998
Conference
ICTF13/ACSIN8
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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ul-Hassan, JawadHenry, AnneBergman, PederJanzén, Erik

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  • apa
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