Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes
2006 (English)In: Physics of the solid state, ISSN 1063-7834, Vol. 48, no 10, 1993-1999 p.Article in journal (Refereed) Published
It is demonstrated that the microphotoluminescence (µPL) spectrum of a single InAs/GaAs self-assembled quantum dot (QD) undergoes considerable changes when the primary laser excitation is complemented with an additional infrared laser. The primary laser, tuned slightly below the GaAs band gap, provides electron-hole pairs in the wetting layer (WL), as well as excess free electrons from ionized shallow acceptors in the GaAs barriers. An additional IR laser with a fixed energy well below the QD ground state transition generates excess free holes from deep levels in GaAs. The excess electron and hole will experience diffusion separately, due to the time separation between the two events of their generation, to eventually become captured into the QD. Although the generation rates of excess carries are much lower than that of the electron-hole pair generation in the WL, they considerably influence the QD emission at low temperatures. The integrated PL intensity increases by several times as compared to single-laser excitation, and the QD exciton spectrum is redistributed in favor of a more neutral charge configuration. The dependence of the observed phenomenon on the powers of the two lasers and the temperature has been studied and is consistent with the model proposed. The concept of dual excitation could be successfully applied to different low-dimensional semiconductor structures in order to manipulate their charge state and emission intensity. © Nauka/Interperiodica 2006.
Place, publisher, year, edition, pages
2006. Vol. 48, no 10, 1993-1999 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50119DOI: 10.1134/S1063783406100295OAI: oai:DiVA.org:liu-50119DiVA: diva2:271015