Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering
2006 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 291, no 1, 290-300 p.Article in journal (Refereed) Published
The formation of ternary compounds within the Ti-Al-C system was studied by magnetron sputtering for thin-film deposition and first-principles calculations for phase stability. As-deposited films were characterized with X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM). The hardness and Young's moduli of the material were studied by nanoindentation. Epitaxial and phase-pure films of Mn+1AXn phases Ti3AlC2 and Ti2AlC as well as the perovskite phase Ti3AlC were deposited on Al2O3(00l) wafers kept at temperatures between 800 and 900 °C. The only ternary phases observed at low temperatures (300 °C) were Ti3AlC and cubic (Ti,Al)C, the latter can be described as a metastable solid solution of Al in TiC similar to the more studied (Ti,Al)N system. The difficulties to form MAX phases at low substrate temperatures were attributed of requirement for a sufficient diffusivity to partition the elements corresponding to the relatively complex crystal structures with long c-axes. While MAX-phase synthesis at 800 °C is significantly lower than contemporary bulk sintering processes, a reduction of the substrate temperature towards 300 °C in the present thin-film deposition experiments resulted in stacking sequence variations and the intergrowth of (Ti,Al)C. © 2006 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 291, no 1, 290-300 p.
A1. Solid solutions, A3. PVD, B1. Carbides, B1. MAX-phase, B1. Perovksite
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50222DOI: 10.1016/j.jcrysgro.2006.03.008OAI: oai:DiVA.org:liu-50222DiVA: diva2:271118