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Properties of AlN epitaxial layers on 6H-SiC substrate grown by sublimation in argon, nitrogen, and their mixtures
Bulgarian Academy of Science, Sofia, Bulgaria.
Bulgarian Academy of Science, Sofia, Bulgaria.
University of Sofia, Bulgaria.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2006 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 129, no 1-3, 228-231 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial layers of aluminum nitride (AlN) have been grown at temperature 1900 °C on 10 mm × 10 mm 6H-SiC substrate via sublimation-recondensation in RF heated graphite furnace. The source material was polycrystalline sintered AlN. Growth of AlN layers in pure nitrogen, mixed nitrogen/argon and pure argon atmosphere of 50 mbar were compared. A maximum growth rate of about 30 µm/h was achieved in pure nitrogen atmosphere. The surface morphology reflects the hexagonal symmetry of the seed, which is characteristic of an epitaxial growth for samples grown in a pure nitrogen and mixed nitrogen/argon atmosphere. X-ray diffraction (XRD) measurements show very strong and well defined (0 0 0 2) reflection positioned at around 36° in symmetric ?-2? scans. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN layers. This study demonstrates that nitrogen is necessary for the successful epitaxial growth of AlN on 6H-SiC by sublimation. © 2006 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier, 2006. Vol. 129, no 1-3, 228-231 p.
Keyword [en]
AlN, Gas ambient, Morphology, Raman spectroscopy, Sublimation epitaxy, XRD
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-50237DOI: 10.1016/j.mseb.2006.01.016OAI: diva2:271133
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2013-08-05Bibliographically approved

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Birch, JensYakimova, Rositsa
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