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III-V/II-VI heterovalent double quantum wells
Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation.
Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation.
Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation.
Ioffe Physico-Technical Institute, Polytehknicheskaya 26, 194021 St. Petersburg, Russian Federation.
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2006 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 243, no 4, 819-826 p.Article in journal (Refereed) Published
Abstract [en]

We report on design, fabrication by molecular beam epitaxy, and photoluminescence (PL) studies of III-V/II-VI heterovalent structures containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The studies of temperature-dependent and time-resolved PL have provided an insight into the nature of the exciton localization potential induced by the heterovalent interface. It is found that under the resonant conditions the observed emission mostly originates from the recombination of excitons confined in type II quantum-dot-like structures, where the holes are localised within the GaAs QW due to the well width fluctuations and the electrons are localized in the plane of the ZnCdMnSe QW due to the fluctuations of the conduction band offset at the heterovalent interface, induced by random variation of the interface microscopic structure. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.

Place, publisher, year, edition, pages
2006. Vol. 243, no 4, 819-826 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-50282DOI: 10.1002/pssb.200564763OAI: oai:DiVA.org:liu-50282DiVA: diva2:271178
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Bergman, PederMonemar, Bo

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