Electronic structure study of reconstructed Au-SiC(0 0 0 1) surfaces
2006 (English)In: Surface Science, ISSN 0039-6028, Vol. 600, no 2, 436-441 p.Article in journal (Refereed) Published
A study of surface and interface properties of reconstructed Au-SiC(0 0 0 1) surfaces is reported. Two reconstructions were prepared on SiC(0 0 0 1), a v3 × v3R30° and a Si-rich 3 × 3, before Au deposition and subsequent annealing at different temperatures. For the Si-rich 3 × 3 surface the existence of three stable reconstructions 2v3 × 2v3R30°, 3 × 3 and 5 × 5 are revealed after deposition of Au layers, 4-8 Å thick, and annealing at progressively higher temperatures between 500 and 950 °C. For the 2v3 surface two surface shifted Si 2p components are revealed and the Au 4f spectra clearly indicate silicide formation. The variation in relative intensity for the different core level components with photon energy suggests formation of an ordered silicide layer with some excess Si on top. Similar core level spectra and variations in relative intensity with photon energy are obtained for the 3 × 3 and 5 × 5 phases but the amount of excess Si on top is observed to be smaller and an additional weak Si 2p component becomes discernable. For the v3 surface the evolution of the core level spectra after Au deposition and annealing is shown to be distinctly different than for the Si-rich 3 × 3 surface and only one stable reconstruction, a 3 × 3 phase, is observed at similar annealing temperatures. © 2005 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 600, no 2, 436-441 p.
(0 0 0 1), Au, Gold, Interfaces, Photoemission, Reconstruction, Silicide, Silicon carbide, Synchrotron radiation
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50312DOI: 10.1016/j.susc.2005.10.041OAI: oai:DiVA.org:liu-50312DiVA: diva2:271208