Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
2006 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 371, no 1, 133-139 p.Article in journal (Refereed) Published
In this paper, the potential of the high growth rate hydride vapor phase epitaxy technique and laser lift-off for the fabrication of large-area (2?) free-standing GaN substrates is revealed. Structural and optical properties of 250-µm-thick GaN layer grown on a MOVPE epitaxial lateral overgrown GaN template have been investigated employing different analytical experimental techniques. A low value of dislocation density of ~1×107 cm-2 on the Ga-terminated face of the free-standing material was determined from AFM images. X-ray diffraction (XRD), Raman scattering measurements, and low-temperature photoluminescence (PL) were exploited to assess the structural and optical quality of the GaN. The full-width at half-maximum value of XRD ?-scans of the free-standing GaN material was determined to be 264 arcsec for the (101¯4) reflection. The XRD and low-temperature PL mapping measurements consistently proved the good crystalline quality and lateral homogeneity and small residual stress inside the material. Hence, the free-standing GaN achieved is highly advantageous for a lattice-constant and thermal-expansion-coefficient matched substrate for additional strain-free homoepitaxy of III-nitrides-based device heterostructures. © 2005 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 371, no 1, 133-139 p.
Bulk-like, ELO, Free-standing, GaN, GaN substrates, HVPE
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50313DOI: 10.1016/j.physb.2005.10.122OAI: oai:DiVA.org:liu-50313DiVA: diva2:271209