Measurement of micrometer diffusion lengths by nuclear spectrometry
2005 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, Vol. 39, no 12, 1394-1398 p.Article in journal (Refereed) Published
A method for determination of diffusion lengths in the range 0.5-50 µm, which corresponds to carrier lifetimes in the nanosecond range, is suggested A calibrated nonequilibrium charge is injected into the base of the reverse-biased diode structure. The injection is provided by alpha particles generated by natural decay in the single-particle counting mode. The nuclear spectrometry technique is used to measure the amount of charge that diffused across the base to the boundary of the electric-field region. The loss of charge during the diffusion is calculated as a function of the depth of alpha particle penetration beyond the electric-field region. The derived power-law functions make it possible to relate the diffusion length with the exponent and numerical factor that describes the loss of charge. The experiment is performed with lightly doped 4H-SiC epitaxial films. © 2005 Pleiades Publishing, Inc.
Place, publisher, year, edition, pages
2005. Vol. 39, no 12, 1394-1398 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50336DOI: 10.1134/1.2140311OAI: oai:DiVA.org:liu-50336DiVA: diva2:271232