Defect-driven inhomogeneities in Ni4H-SiC Schottky barriers
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 87, no 24, 242106- p.Article in journal (Refereed) Published
Nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal diode characteristics due to multiple barriers within individual contacts. Near-interface DRCLS demonstrates the presence of three discrete midgap defect levels with 2.2, 2.45, and 2.65 eV emission energies whose concentrations vary on a submicron scale among and within individual diodes, correlating with barrier inhomogeneity. These results also suggest that SiC native defect levels can account for the maximum range of n -type barrier heights. © 2005 American Institute of Physics.
Place, publisher, year, edition, pages
2005. Vol. 87, no 24, 242106- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50337DOI: 10.1063/1.2141719OAI: oai:DiVA.org:liu-50337DiVA: diva2:271233