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Defect-driven inhomogeneities in Ni4H-SiC Schottky barriers
Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210.
Department of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213.
Department of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 87, no 24, 242106- p.Article in journal (Refereed) Published
Abstract [en]

Nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal diode characteristics due to multiple barriers within individual contacts. Near-interface DRCLS demonstrates the presence of three discrete midgap defect levels with 2.2, 2.45, and 2.65 eV emission energies whose concentrations vary on a submicron scale among and within individual diodes, correlating with barrier inhomogeneity. These results also suggest that SiC native defect levels can account for the maximum range of n -type barrier heights. © 2005 American Institute of Physics.

Place, publisher, year, edition, pages
2005. Vol. 87, no 24, 242106- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-50337DOI: 10.1063/1.2141719OAI: oai:DiVA.org:liu-50337DiVA: diva2:271233
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-12

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Wahab, Qamar Ul

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