Effect of an electric field on the carrier collection efficiency of InAs quantum dots
2005 (English)In: Physics of the solid state, ISSN 1063-7834, Vol. 47, no 11, 2154-2161 p.Article in journal (Refereed) Published
Individual and multiquantum dots of InAs are studied by means of microphotoluminescence in the case where, in addition to the principal laser exciting photoluminescence, second infrared laser is used. It is demonstrated that the absorption of the infrared photons effectively creates free holes in the sample, which leads to both a change in the charge state of a quantum dot and to a considerable reduction of their photoluminescence signal. The latter effect is explained in terms of effective screening of the internal electric field, facilitating carrier transport along the plane of a wetting layer, by the surplus holes from the infrared laser. It is shown that the effect of quenching of quantum dot photoluminescence gradually disappears at increased sample temperature (T) and/or dot density. This fact is due to the essentially increased value of quantum dot collection efficiency, which could be achieved at elevated sample temperatures for individual quantum dots or even at low T for the case of multiquantum dots. It is suggested that the observed phenomena can be widely used in practice to effectively manipulate the collection efficiency and the charge state of quantum-dot-based optical devices. © 2005 Pleiades Publishing, Inc.
Place, publisher, year, edition, pages
2005. Vol. 47, no 11, 2154-2161 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50381DOI: 10.1134/1.2131162OAI: oai:DiVA.org:liu-50381DiVA: diva2:271277