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Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Faculty of Physics, Sofia University, 5, Boulevard James Bourchier, 1164-Sofia, Bulgaria.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2005 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 5, no 11, 2117-2122 p.Article in journal (Refereed) Published
Abstract [en]

Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains. © 2005 American Chemical Society.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2005. Vol. 5, no 11, 2117-2122 p.
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Atom and Molecular Physics and Optics
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URN: urn:nbn:se:liu:diva-50395DOI: 10.1021/nl050926aOAI: oai:DiVA.org:liu-50395DiVA: diva2:271291
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12Bibliographically approved

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Moskalenko, EvgeniiKarlsson, FredrikHoltz, Per-OlofMonemar, Bo

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Moskalenko, EvgeniiKarlsson, FredrikHoltz, Per-OlofMonemar, Bo
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Atom and Molecular Physics and Optics

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