Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
2005 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 5, no 11, 2117-2122 p.Article in journal (Refereed) Published
Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains. © 2005 American Chemical Society.
Place, publisher, year, edition, pages
American Chemical Society (ACS), 2005. Vol. 5, no 11, 2117-2122 p.
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:liu:diva-50395DOI: 10.1021/nl050926aOAI: oai:DiVA.org:liu-50395DiVA: diva2:271291