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Momentum selectivity and anisotropy effects in the nitrogen K -edge resonant inelastic x-ray scattering from GaN
Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland.
Department of Physics, Uppsala University, Box 530, S-75121 Uppsala, Sweden, Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland.
Department of Physics, Uppsala University, Box 530, S-75121 Uppsala, Sweden.
Institut für Materialchemie, Technische Universität Wien, A-1060 Wien, Austria.
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2005 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 72, no 8Article in journal (Refereed) Published
Abstract [en]

High-resolution soft x-ray emission and absorption spectra near the N K -edge of wurtzite GaN are presented. The experimental data are interpreted in terms of full-potential electronic structure calculations. The absorption spectra, compared with calculations including core hole screening, indicate partial core hole screening in the absorption process. The resonantly excited x-ray emission spectra show pronounced dispersion of spectral structures, which is attributed to effects of momentum conservation in the resonant inelastic x-ray scattering (RIXS) process. In development of GaN based optoelectronics, momentum selectivity in RIXS can be utilized to control development of band structure in GaN nanostructures. © 2005 The American Physical Society.

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2005. Vol. 72, no 8
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-50438DOI: 10.1103/PhysRevB.72.085221OAI: oai:DiVA.org:liu-50438DiVA: diva2:271334
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskova, Tanja

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