Band alignment in GaInNP/GaAs heterostructures grown by gas-source molecular-beam epitaxy
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 26, 261904- p.Article in journal (Refereed) Published
Low-temperature photoluminescence (PL), PL excitation, and optically detected cyclotron resonance measurements are employed to determine band alignment in GaInNP/GaAs heterostructures grown by gas-source molecular-beam epitaxy. The type II band alignment at the Ga0.46In0.54NxP1−x/GaAs interface is concluded for the alloys with x ≥ 0.5% based on (i) highly efficient PL upconversion observed in the N containing samples and (ii) appearance of a near-infrared PL emission attributed to the spatially indirect type II transitions. Compositional dependence of the conduction band offset at the Ga1−yInyNxP1−x/GaAs interface is also estimated.
Place, publisher, year, edition, pages
2005. Vol. 86, no 26, 261904- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-50479DOI: 10.1063/1.1952586OAI: oai:DiVA.org:liu-50479DiVA: diva2:271375